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Sn-839 continuous bright tin plating process

Sn-839 continuous bright tin plating process

  • Type
    Bright Tin Plating
  • Use
    Tin Plating
  • Item
    Chemical Auxiliary Agent
  • Feature
    High Speed Plating
  • Place of Origin
    CHINA
  • Brand Name
    FENGFAN
  • Model Number
    Sn-839
  • Minimum Order Quantity
    Negotiable
  • Price
    Negotiable
  • Packaging Details
    Standard export packaging
  • Delivery Time
    15-25 work days
  • Payment Terms
    L/C,D/A,D/P,T/T,Western Union,MoneyGram
  • Supply Ability
    200000pcs/day

Sn-839 continuous bright tin plating process

Sn-839 continuous bright tin plating process

The Sn-839 process is suitable for continuous bright tin plating processes at high speed. It is designed for strip, wire, connectors, lead frames, etc. The main features and advantages of the process are briefly described below.

 

1, The plating is not easy to produce pinholes and fogging, and can get uniform bright plating in a wide range of current.

2, Lead-free and cadmium-free, complying with ROHS and ELV regulations.

3, Very low organic content, minimal discolouration after steam and heat treatment, excellent solderability.

4, High current efficiency, stable plating solution, easy to control.

5, The plating retains its good ductility and weldability even after storage.

 

Solution composition

 

Optimal           Range

Sn2+                                               50.0 g/L                                    50-80 g/L

Methanesulfonic acid        200 g/L                                    150-220 g/L

Sn-839A carrier            20ml/l                                      15-25 ml/l

Sn-839B brightener       5ml/l                                        3- 10 ml/l

Temp.              18-25            18-25

Cathode current density    20A/dm2                                                        5-40A/dm2

Anode:Cathode area      2 :1                                          2 :1

Voltage                                         1-3V                                        1-3V

Deposition rate            Minimum 10 microns per minute at a current density of 20A/dm2